Optimization of InGaN Laser Diodes Based on Numerical Simulations
K. Sakowskia,b, P. Strak a, S. Krukowskia,c and L. Marcinkowski b
aInstitute of High Pressure Physics, Polish Academy of Sciences, SokoĊ‚owska 29/37, 01-142 Warsaw, Poland
bDepartment of Mathematics, Computer Science and Mechanics, University of Warsaw, S. Banacha 2, 02-097 Warsaw, Poland
cInterdisciplinary Centre for Materials Modeling, Warsaw University, A. PawiĊ„skiego 5a, 02-106 Warsaw, Poland
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Simulations of blue and green laser diodes with InGaN quantum wells are presented. In this study, a particular emphasis on efficiency and optical power of the structures was placed. Effect of the aluminum content in an electron blocking layer on the electron overflow and efficiency is discussed. Substantial decrease of efficiency of laser diodes is reported for low aluminum levels. It is also shown that polarization charges existing in AlInGaN heterostructures grown on GaN polar direction and low ionization degree of magnesium acceptors lead to high resistance of these devices. These effects hinder the carriers from reaching an active region and consequently they impose high operating voltages.

DOI: 10.12693/APhysPolA.129.A-33
PACS numbers: 42.55.Px, 02.60.Cb