High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions

B. Sadovyia,b, M. Amilusik a, G. Staszczak a, M. Bockowski a, I. Grzegory a, S. Porowski a, L. Konczewicz c, V. Tsybulskyi b, M. Panasyuk b, V. Rudyk b, I. Karbovnyk b, V. Kapustianyk b, E. Litwin-Staszewska a and R. Piotrzkowski a aInstitute of High Pressure Physics, Polish Aacademy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland bIvan Franko National University of Lviv, Dragomanova 50, Lviv 79005, Ukraine cLaboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Universit'e de Montpellier, Montpellier, F-France

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Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.

DOI: 10.12693/APhysPolA.129.A-126 PACS numbers: 71.55.Eq, 72.80.Ey