Electron-Deformational Phase Transitions in a TlGaSe2 Layered Crystal
L.Yu. Kharkhalis a, K.E. Glukhov a and M. Sznajderb
aInstitute of Physics and Chemistry of Solid State, Uzhgorod National University, 54 Voloshin St., 88000 Uzhgorod, Ukraine
bFaculty of Mathematics and Natural Sciences, University of Rzeszów, S. Pigonia 1, 35-959 Rzeszów, Poland
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We investigate the self-consistent localized electron states which are related to charge carrier inhomogeneities in a TlGaSe2 crystal, in the framework of the continuum and the deformational potential approaches. For this purpose a nonstandard dispersion law for charge carriers following from the ab initio band structure calculation of the considered crystal is utilized. It is shown that a formation of stable localized electron states with different bond energy, which are separated by the potential barrier, takes place. These states can be responsible for the occurrence of the deformational phase transition in the presence of the non-equilibrium charge carriers in TlGaSe2.

DOI: 10.12693/APhysPolA.129.A-123
PACS numbers: 71.15.Mb, 71.20.Nr, 71.38.-k