Micro-Photoluminescence Studies of CdSe/ZnSe Quantum Dot Structures Grown under Different Conditions |
| M.V. Rakhlin, S.V. Sorokin, I.V. Sedova, A.A. Usikova, S.V. Gronin, K.G. Belyaev, S.V. Ivanov, A.A. Toropov
Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia |
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| We report on comparative studies of CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy either with or without predeposition of a sub-monolayer-thick CdTe layer (stressor). Also we consider the structure grown in a thermal activation mode. Emission properties of individual quantum dots are investigated by micro-photoluminescence spectroscopy using 500 nm apertures opened in a non-transparent gold mask. The density of emitting quantum dots and the spectral width of the single-dot emission lines are estimated. |
DOI: 10.12693/APhysPolA.129.A-117 PACS numbers: 68.65.Hb, 78.55.Et, 81.07.Ta |