Micro-Photoluminescence Studies of CdSe/ZnSe Quantum Dot Structures Grown under Different Conditions
M.V. Rakhlin, S.V. Sorokin, I.V. Sedova, A.A. Usikova, S.V. Gronin, K.G. Belyaev, S.V. Ivanov, A.A. Toropov
Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
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We report on comparative studies of CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy either with or without predeposition of a sub-monolayer-thick CdTe layer (stressor). Also we consider the structure grown in a thermal activation mode. Emission properties of individual quantum dots are investigated by micro-photoluminescence spectroscopy using 500 nm apertures opened in a non-transparent gold mask. The density of emitting quantum dots and the spectral width of the single-dot emission lines are estimated.

DOI: 10.12693/APhysPolA.129.A-117
PACS numbers: 68.65.Hb, 78.55.Et, 81.07.Ta