Effect of Misfit Strain in (Ga,Mn)(Bi,As) Epitaxial Layers on Their Magnetic and Magneto-Transport Properties
K. Levchenkoa, T. Andrearczyk a, J.Z. Domagała a, J. Sadowskia,b, L. Kowalczyk a, M. Szot a, T. Figielski a and T. Wosiński a
aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
bMAX-IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
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Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or tensile strain, respectively. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and the Curie temperature in the layers.

DOI: 10.12693/APhysPolA.129.A-90
PACS numbers: 75.50.Pp, 61.05.cp, 78.20.Ls, 73.50.Jt, 75.30.Gw