Magnetoresistance in Graphene-Based Ferromagnetic/ Rashba Barrier/Ferromagnetic Heterojunction
H. Mohammadpour and K. Hasanirokh
Azarbaijan Shahid Madani University, 53714-161 Tabriz, Iran
Received: May 3, 2015; In final form: December 28, 2015
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The quantum tunnelling of spin-polarized electrons through a Rashba barrier on a single layer graphene is studied by the scattering matrix method. It is shown that the magnetoresistance, defined as the difference between conductance at the presence and absence of the Rashba spin-orbit interaction, oscillates with the intensity of interaction. These oscillations are also observed in the conductance versus the potential energy of the barrier.

DOI: 10.12693/APhysPolA.129.75
PACS numbers: 72.80.Vp, 73.23.-b, 73.22.Pr