Electrical and Thermoelectrical Properties of TlIn1-xYbxTe2 (0 ≤ x ≤ 0.10) Solid Solutions in the Temperature Range of 80-1000 K |
| F.F. Alieva, E.R. Yuzbashov a, U.M. Agayeva b and M.M. Zarbaliev b
aInstitute of Physics of ANAS, Baku, av. H. Javid 131, AZ1143, Azerbaijan bSumgayit State University, Azerbaijan |
| Received: March 10, 2015; Revised version: June 22, 2015; In final form: October 20, 2015 |
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| The temperature dependence of the electrical conductivity σ, the Hall coefficient R and the thermopower coefficient α in the solid solutions TlIn1-xYbxTe2 (0 ≤ x ≤0.10) have been investigated in the temperature range of 80-1000 K. The effective masses of electrons and holes have been determined on the basis of the kinetic parameters. It was established that starting from x = 0.05 the solid solutions of TlIn1-xYbxTe2 belong to narrow-gap semiconductors having high values of the interaction matrix element. It is shown that the samples of TlIn1-xYbxTe2 in the region of 0.10 ≥ x ≥ 0.05 are promising materials for the energy converters operating at high temperatures. |
DOI: 10.12693/APhysPolA.129.69 PACS numbers: 71.20.Nr, 72.15.Jf |