Thermal Desorption of Helium from Defected Silicon

M. Tureka, A. Droździel a, K. Pyszniak a, A. Wójtowicz a, D. Mączka b, Y. Yuschkevich c, Y. Vaganov c and J. Żuk a aInstitute of Physics, Maria Curie-Skłodowska University in Lublin, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland bNational Centre for Nuclear Research, A. Sołtana 7, 05-400 Otwock cJoint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow region, Russia

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The thermal desorption spectroscopy measurements of He implanted silicon samples are reported. The He implantation energy was 90 keV (at 45° tilt) while the fluence was 1016 cm-2. Additionally, the influence of Si pre-implantation (fluences in the range 1014 - 1016 cm-2, E=260 keV) was under investigation. The He releases from both interstitials/vacancies (β peak) and cavities (α peak or rather band consisting probably of at least two peaks) were observed. The α peak disappears for the pre-implantation fluences larger than 1015 cm-2, while β peak becomes broader and shifts toward higher temperatures. The thermal desorption spectra were collected using heating ramp rates in the range 0.3-0.7 K/s. Desorption activation energy of the β peak for different pre-implantation fluences was found using the Redhead analysis of the β peak shift. It varies from 0.97 eV for the sample that was not pre-implanted up to 1.3 eV for the sample pre-implanted with the fluence 1016 cm-2.

DOI: 10.12693/APhysPolA.128.849 PACS numbers: 68.43.Vx, 61.72.uf