Thermal Desorption of Helium from Defected Silicon
M. Tureka, A. Droździel a, K. Pyszniak a, A. Wójtowicz a, D. Mączka b, Y. Yuschkevich c, Y. Vaganov c and J. Żuk a
aInstitute of Physics, Maria Curie-Skłodowska University in Lublin, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
bNational Centre for Nuclear Research, A. Sołtana 7, 05-400 Otwock
cJoint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow region, Russia
Full Text PDF
The thermal desorption spectroscopy measurements of He implanted silicon samples are reported. The He implantation energy was 90 keV (at 45° tilt) while the fluence was 1016 cm-2. Additionally, the influence of Si pre-implantation (fluences in the range 1014 - 1016 cm-2, E=260 keV) was under investigation. The He releases from both interstitials/vacancies (β peak) and cavities (α peak or rather band consisting probably of at least two peaks) were observed. The α peak disappears for the pre-implantation fluences larger than 1015 cm-2, while β peak becomes broader and shifts toward higher temperatures. The thermal desorption spectra were collected using heating ramp rates in the range 0.3-0.7 K/s. Desorption activation energy of the β peak for different pre-implantation fluences was found using the Redhead analysis of the β peak shift. It varies from 0.97 eV for the sample that was not pre-implanted up to 1.3 eV for the sample pre-implanted with the fluence 1016 cm-2.

DOI: 10.12693/APhysPolA.128.849
PACS numbers: 68.43.Vx, 61.72.uf