Investigation of NbN and Nb-Si-N Coatings Deposited by Magnetron Sputtering

V.I. Ivashchenko a, P.L. Scrynskyy a, O.S. Lytvyn b, V.M. Rogozc, O.V. Sobol d, A.P. Kuzmenko e, H. Komsta f and C. Karvat g aInstitute for Problems of Material Science, NASU, Krzhyzhanovsky Str. 3, 03680 Kiev - 142, Ukraine bInstitute of Semiconductor Physics, NASU, Nauky Pr. 41, 03028 Kyiv, Ukraine cSumy State University, Rimsky-Korsakov Str. 2, 40000, Sumy, Ukraine dNational Technical University "Kharkiv Polytechnic Institute", Frunze Str. 21, 61002, Kharkov, Ukraine eKursk State Technical University, Center for collective use "High Tech", 305040, October 50 Str. 94, Kursk, Russia fInstitute of Transport, Combustion Engines and Ecology, Lublin University of Technology, Nadbystrzycka 36, 20-618 Lublin, Poland gDepartment of Electrical Devices and High Voltage Technology, Lublin University of Technology, Nadbystrzycka 36, 20-618 Lublin, Poland

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NbN and Nb-Si-N films were deposited by magnetron sputtering the Nb and Si targets on silicon wafers at various bias voltages, Us. The deposited films were annealed to establish their thermal stability. The films were investigated by atomic force microscope, X-ray diffraction, X-ray photoelectron spectroscopy and nanoindentation. The NbN films were nanostructured, and the Nb-Si-N films had a nanocomposite structure, and represented an aggregation of δ-NbNx nanocrystallites embedded into the amorphous Si3N4 tissue (nc-δ-NbNx/a-Si3N4).

DOI: 10.12693/APhysPolA.128.949 PACS numbers: 61.05.C-, 61.05.cp, 68.37.Ps, 61.05.js