Research on Thermal Stability of Electrical Parameters of Silicon Used in PV Cells Production Process
P. WÄ™gierek and P. Billewicz
Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland
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Considering the results of recent research, it is possible to state that the problem of thermal stability of electrical parameters of silicon is very important in the context of efficiency of commonly used photovoltaic cells. Subsequent investigations confirmed that the efficiency of photovoltaic cells is strongly influenced by active defects of silicon crystal lattice. Those defects, arising in the process of photovoltaic cells base material preparation, are responsible for changes in the values of conductivity and activation energy of the tested material. Taking this into consideration, it is reasonable to carry out research oriented at experimental verification of the influence of both operating temperature on the electrical parameters of silicon and annealing temperature on the distribution of radiation defects in the silicon substrate used in the production of photovoltaic cells. The main purpose of this work is a comparative analysis of dependences of electrical parameters of silicon on temperature. The article presents the results of the research on resistivity and capacity of silicon samples (doped with boron and phosphorus) whose structure was modified by the ion implantation process.

DOI: 10.12693/APhysPolA.128.943
PACS numbers: 61.72.uj, 61.72.Cc, 72.80.Ey