Surface Composition of CIS Compound Affected by Xe+ Irradiation
I.S. Tashlykov a, P. Zukowskib, D.A. Silvanovich a and V.F. Gremenok c
aBelarusian State Pedagogical University, 18 Sovetskaja Str., 220050 Minsk, Belarus
bLublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland
cS-PM Research Centre, NAS of Belarus, 19 P. Brovka Str., 220072 Minsk, Belarus
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The paper presents the results of investigation of element composition of CuInSe2 (CIS) compounds obtained by vertical Bridgman technique and on a glass substrate by the thermal deposition of Cu-In thin films with the subsequent annealing in selenium vapour. The depth profile distribution of elements in these samples using the Rutherford backscattering spectrometry/channeling technique in conjunction with the RUMP code simulation is also discussed.

DOI: 10.12693/APhysPolA.128.927
PACS numbers: 68.37.Ps, 06.30.Bp