Effect of N2+ Ion Implantation and Thermal Annealing on Near-Surface Layers of Implanted GaAs
M. Kulika,b, Z. Surowiec a, W. Rzodkiewicz c, J. Filiks a and A. Drozdziel a
aInstitute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
bFrank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, Joliot-Curie str. 6, Dubna, 141980, Moscow reg., Russia
cInstitute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland
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The surface of semi-isolating GaAs (100) was irradiated with a fluence of 6×1017 cm-2 of the N2+ ion beam; Then, the samples were thermally annealed at temperatures of 500, 700, and 900°C for 2 h in an argon gas flow. The surface roughness of implanted samples was investigated with the help of atomic force microscopy. Numerous hillocks, which caused a significant increase in surface roughness, were observed. The spectroscopic ellipsometry method was used for determination of pseudo-dielectric functions of the near-surface layers in the investigated samples and the thickness of native oxides covering the irradiated surface. It was observed that the shapes of disorder spectra of the dielectric functions of near-surface layers of implanted GaAs partly returned to their original state after the thermal annealing.

DOI: 10.12693/APhysPolA.128.918
PACS numbers: 78.66.Fd, 78.68.+m, 79.20.Rf