Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

N.A. Poklonski a, N.I. Gorbachuk a, Vo Quang Nha a, S.V. Shpakovski b, V.A. Filipenya b, V.A. Skuratov c, T.N. Kołtunowiczd, N. Kukharchyk e, H.-W. Becker e and A. Wieck e aBelarusian State University, 4 Nezavisimosti Pr., BY-220030, Minsk, Belarus bJSC "INTEGRAL", 121A Kazintsa Str., BY-220108, Minsk, Belarus cJoint Institute for Nuclear Research, 6 Joliot-Curie Str., RU-141980 Dubna, Russia dLublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland eRuhr-University Bochum, 150 Universitaets Str., D-44780 Bochum, Germany

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Silicon diodes irradiated with helium ions with energies of 4.1, 6.8 and 8.9 MeV are studied. It is shown that the mechanism determining the behaviour of frequency dependence of complex electric module and correspondingly the behavior of impedance of diodes irradiated with helium ions in the frequency region 3-200 kHz is a recharging of vacancy complexes localized in the space charge region.

DOI: 10.12693/APhysPolA.128.891 PACS numbers: 72.20.Jv, 61.80.Fe