Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment
V.V. Andreeva, G.G. Bondarenko b, V.M. Maslovsky c and A.A. Stolyarov a
aBauman Moscow State Technical University, Kaluga Branch 2, Bazhenov St., Kaluga, 248000, Russia
bNational Research University, Higher School of Economics, 20, Myasnitskaya Str., Moscow 101000, Russia
cZelenograd Research Institute of Physical Problems, Moscow, 124460, Russia
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Methods of modification of gate dielectrics of the MOS structures by high-field electron injection and arc plasma jet treatment were studied. It is possible to use them for correction of parameters, decreasing defects number and increasing reliability of MOS devices. It was found that the negative charge accumulated in the film of the phosphorus-silicate glass of the MOS structures with the two-layer gate dielectric SiO2-phosphorus-silicate glass under the high-field electron injection can be used for modification of devices with the same structures. It is shown that the injection-thermal treatment allows to find and exclude MOS structures with defects of isolation and charge defects. Arc plasma jet treatment was found to improve characteristics of the MOS devices. These treatments increase injection and radiation resistance of the gate dielectric by creating the needed density of electron traps in the bulk of SiO2 film.

DOI: 10.12693/APhysPolA.128.887
PACS numbers: 73.40.Qv,73.40.Gk