Mechanisms of Carrier Transport in Cux(SiO2)1-x Nanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions

A. Fedotov a, A. Mazanik a, I. Svito a, A. Saad b, V. Fedotova c, K. Czarnacka d and T.N. Koltunowiczd aBelarusian State University, 220030, Minsk, Belarus bAl Balqa Applied University, Physics Department, P.O. Box 4545, Amman 11953, Jordan cScientific-Practical Material Research Centre NAS of Belarus, 220040 Minsk, Belarus dLublin University of Technology, 20-618 Lublin, Poland

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The present paper investigates the temperature/frequency dependences of admittance Z in the granular Cux(SiO2)1-x nanocomposite films around the percolation threshold xC in the temperature range of 4-300 K and frequencies of 20-106 Hz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold xC ≈0.59 and nearly metallic behaviour beyond the xC. The high-frequency curves ReZ(f) at temperatures T>10 K for the samples with x<xC exhibited behavior close to ReZ(f) ≈ f-s with s ≈1.0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x>xC), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles.

DOI: 10.12693/APhysPolA.128.883 PACS numbers: 84.37.+q, 72.80.Ga, 73.22.-f, 61.46.Df, 64.60.ah