Simulation of Radiation Effects in SiO_{2}/Si Structures |

F.F. Komarov
^{a}, G.M. Zayats^{ b}, A.F. Komarov^{ a}, S.A. Miskiewicz^{ a}, V.V. Michailov^{ a} and H. Komsta^{ c}^{a}Institute of Applied Physics Problems, 7 Kurchatov Str., 220045 Minsk, Belarus
^{b}Institute of Mathematics, National Academy of Sciences of Belarus, 11 Surganov Str., 220072 Minsk, Belarus
^{c}Lublin University of Technology, Nadbystrzycka 36, 20-618 Lublin, Poland |

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The space-time evolution of electric charge induced in the dielectric layer of simulated metal-insulator-semiconductor structures due to irradiation with X-rays is discussed. The system of equations used as a basis for the simulation model is solved iteratively by the efficient numerical method. The obtained simulation results correlate well with the respective data presented in other scientific publications. |

DOI: 10.12693/APhysPolA.128.857 PACS numbers: 02.30.Hq, 02.60.Cb |