Simulation of Radiation Effects in SiO2/Si Structures |
| F.F. Komarova, G.M. Zayats b, A.F. Komarov a, S.A. Miskiewicz a, V.V. Michailov a and H. Komsta c
aInstitute of Applied Physics Problems, 7 Kurchatov Str., 220045 Minsk, Belarus bInstitute of Mathematics, National Academy of Sciences of Belarus, 11 Surganov Str., 220072 Minsk, Belarus cLublin University of Technology, Nadbystrzycka 36, 20-618 Lublin, Poland |
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| The space-time evolution of electric charge induced in the dielectric layer of simulated metal-insulator-semiconductor structures due to irradiation with X-rays is discussed. The system of equations used as a basis for the simulation model is solved iteratively by the efficient numerical method. The obtained simulation results correlate well with the respective data presented in other scientific publications. |
DOI: 10.12693/APhysPolA.128.857 PACS numbers: 02.30.Hq, 02.60.Cb |