Electrochemical Impedance Spectroscopy Studies of HF CVD Diamond Films
M. Kowalska a, K. Fabisiak b,c, A. Wrzyszczyński a, M. Szybowicz d and K. Paprocki b
aFaculty of Chemical Technology and Engineering, University of Technology and Life Sciences, Seminaryjna 3, 85-326 Bydgoszcz, Poland
bInstitute of Physics, Kazimierz Wielki University, Powstańców Wielkopolskich 2, 85-090 Bydgoszcz, Poland
cMedical Physics Department, Oncology Center, I. Romanowskiej 2, 85-796 Bydgoszcz, Poland
dFaculty of Technical Physics, Poznań University of Technology, Piotrowo 3, 60-965 Poznań, Poland
Received: February 26, 2015; In final form: August 13, 2015
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Diamond films were synthesized by a hot filament vapor deposition method using H2/CH4 gas mixtures. A Hioki impedance analyzer was used to study the dielectric properties of the deposited diamond films. The dielectric dispersion measurement yielded the real and imaginary parts of impedance of diamond films in the form of a Nyquist plot in a complex plane. The obtained results were fitted by using equivalent circuit which consists of three impedance (Z) components containing resistor R and capacitor C or constant phase element connected in parallel. The structure and quality of diamond films were analyzed by scanning electron microscopy and the Raman spectroscopy. The impedance measurements showed that concentration of non-diamond admixture has essential influence on electrochemical properties of diamond layers.

DOI: 10.12693/APhysPolA.128.447
PACS numbers: 81.05.Uw, 81.07.-b, 78.66.-w