ACTA

Study of Ti, V and Their Oxides-Based Thin Films in the Search for Hydrogen Storage Materials

Z. Tarnawski^a, K. Zakrzewska^b, N.-T.H. Kim-Ngan^c, M. Krupska^c, S. Sowa^c, K. Drogowska^a, L. Havela^d and A.G. Balogh^e
^aFaculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Kraków, Poland
^bFaculty of Computer Science, Electronics and Telecommunication, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Kraków, Poland
^cInstitute of Physics, Pedagogical University, 30-084 Kraków, Poland
^dFaculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 12116 Prague, Czech Republic
^eInstitute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany

Received: January 24, 2015; In final form: July 6, 2015

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Thin film series consisting of Ti, V, TiO₂ and V₂O₅ layer with different layer geometries, sequences and thicknesses have been prepared by the sputtering technique. The hydrogen depth profile of selected films upon hydrogen charging at 1 bar and/or hydrogenation at pressure up to 102 bar was determined by using secondary ion mass spectrometry and nuclear reaction analysis using a N-15 beam. The highest hydrogen storage with a concentration up to 50 at.% was found in the pure Ti and Ti-contained layer, while it amounts to around 30% in the metallic Ti-V-Ni layer. Hydrogen can diffuse through the TiO₂ layer without accumulation, but can be stored in the VO₂ layer in some cases. Hydrogen can remove the preferential Ti orientation in the films and induce a complete transition of V₂O₅ into VO₂ in the films.

DOI: 10.12693/APhysPolA.128.431
PACS numbers: 81.15.Cd, 68.49.-h, 61.05.C-, 68.60.-p