Effect of Pulsed Laser Power Annealing on Structural and Optical Characteristics of ZnSe Thin Films
S.A. Aly a, Alaa A. Akl a,b and H. Howari c,d
aPhysics Department, Faculty of Science, Minia University, Minia, Egypt
bFaculty of Science in Ad-Dawadmi, Physics Department, Shaqra University, 11911, Kingdom of Saudi Arabia
cDeanship of Educational Services, Qassim University, Kingdom of Saudi Arabia
dPhysics Department, Faculty of Science, Al-Baath University, Homs, Syria
Received: March 19, 2014; Revised version: April 11, 2015; In final form: August 4, 2015
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Samples of ZnSe of the same film thickness (320 nm) have been thermally evaporated on unheated quartz substrates using high purity powder. The prepared films were subjected to pulsed laser annealing of two different powers. X-ray diffraction studies revealed that the as-deposited samples were polycrystalline cubic (zinc-blende type) structure. As the annealing power increases, the crystallinity of ZnSe films was improved with preferential orientation along the (111) direction parallel to the substrate surface. Microstructural characterizations have been evaluated using the Debye-Scherrer formula. The absorption coefficient as well as the energy gap for the as-deposited and the annealed samples were also reported.

DOI: 10.12693/APhysPolA.128.414
PACS numbers: 81.15.-z, 68.55.jd, 68.55.ag, 78.70.Ck, 81.15.Dj, 78.20.-e