Electronic Properties of Cu/n-InP Metal-Semiconductor Structures with Cytosine Biopolymer
Ö. Güllü a and A. Türüt b
aBatman University, Faculty of Sciences and Arts, Department of Physics, Batman, Turkey
bIstanbul Medeniyet University, Faculty of Sciences, Department of Engineering Physics, 34000 Istanbul, Turkey
Received: January 5, 2015; Revised version: June 3, 2015; In final form: June 11, 2015
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This work shows that cytosine biomolecules can control the electrical characteristics of conventional Cu/n-InP metal-semiconductor contacts. A new Cu/n-InP Schottky junction with cytosine interlayer has been formed by using a drop cast process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Cu/cytosine/n-InP structure were investigated at room temperature. A potential barrier height as high as 0.68 eV has been achieved for Cu/cytosine/n-InP Schottky diodes, which have good I-V characteristics. This good performance is attributed to the effect of interfacial biofilm between Cu and n-InP. By using C-V measurement of the Cu/cytosine/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as a function of frequency. Also, the interface-state density of the Cu/cytosine/n-InP diode was found to vary from 2.24×1013 eV-1 cm-2 to 5.56×1012 eV-1 cm-2.

DOI: 10.12693/APhysPolA.128.383
PACS numbers: 73.40.-c, 73.30.+y