Simulation of Carbon Ions Interactions with Monocrystalline Silicon Targets
A. Bouguerra and R. Labbani
Laboratoire de Physique Mathématique et Subatomique, Département de Physique, Faculté des Sciences Exactes, Université Constantine 1, Route de Ain El Bey, 25000 Constantine, Algeria
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In this work, several phenomena related to carbon ion implantation into Si(100) targets were simulated. The investigation was performed using Crystal-TRIM code (crystal-transport and range of ions in matter) under different conditions. In particular, we simulated the carbon profiles with respect to: (i) ions beam (energy, dose, orientation); (ii) substrate (temperature, crystallographic orientation). Two particular cases were taken into account: (i) implantation of 80 keV C+ to a fluence of 2.7× 1017 ion/cm2 at room temperature; (ii) implantation of 40 keV C+ to a fluence of 6.5× 1017 ion/cm2 at substrate temperature of 400°C. For both cases, we used a tilt angle of 7°. Several results were obtained and compared with the Rutherford backscattering spectroscopy and elastic recoil detection analysis results provided by literature.

DOI: 10.12693/APhysPolA.128.B-67
PACS numbers: 78.20.Bh, 85.40.Ry