Simulation of Carbon Ions Interactions with Monocrystalline Silicon Targets |
| A. Bouguerra and R. Labbani
Laboratoire de Physique Mathématique et Subatomique, Département de Physique, Faculté des Sciences Exactes, Université Constantine 1, Route de Ain El Bey, 25000 Constantine, Algeria |
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| In this work, several phenomena related to carbon ion implantation into Si(100) targets were simulated. The investigation was performed using Crystal-TRIM code (crystal-transport and range of ions in matter) under different conditions. In particular, we simulated the carbon profiles with respect to: (i) ions beam (energy, dose, orientation); (ii) substrate (temperature, crystallographic orientation). Two particular cases were taken into account: (i) implantation of 80 keV C+ to a fluence of 2.7× 1017 ion/cm2 at room temperature; (ii) implantation of 40 keV C+ to a fluence of 6.5× 1017 ion/cm2 at substrate temperature of 400°C. For both cases, we used a tilt angle of 7°. Several results were obtained and compared with the Rutherford backscattering spectroscopy and elastic recoil detection analysis results provided by literature. |
DOI: 10.12693/APhysPolA.128.B-67 PACS numbers: 78.20.Bh, 85.40.Ry |