Electrons in a Semiconductor Quantum Well of the Magnetic Tunneling Structure
T. Szczepańskia and V.K. Dugaeva,b
aDepartment of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
bDepartamento de Física and CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, av. Rovisco Pais, 1049-001 Lisbon, Portugal
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We discuss the properties of resonant tunneling diode with resonant levels in the quantum well. The energy levels are formed inside the well as a consequence of quantization of the states between two potential barriers. We solved the Schrödinger equation for the multilayer structure and found the energy of resonant level as a function of the width of quantum well for different parameters of energy profile in the equilibrium. The results present the dependence of spin splitting in the quantum well of nonmagnetic semiconductor on the spin polarization of electrodes.

DOI: 10.12693/APhysPolA.128.222
PACS numbers: 72.25.Dc, 73.21.Fg, 85.75.Mm