Strain Designed Magnetic Properties of III-V Magnetic Semiconductors
S. Stagraczyńskia, C. Jasiukiewicz b, V.K. Dugaevb,c and J. Berakdar a
aInstitut für Physik, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch Str. 3, 06120 Halle (Saale), Germany
bDepartment of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
cDepartamento de Física and CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, av. Rovisco Pais, 1049-001 Lisbon, Portugal
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We present the theoretical analysis of a possibility of the magnetic anisotropy control using various components of the strain tensor in III-V magnetic semiconductor. We used the Kane model of the valence bands for the numerical simulations of the influence of strain on the Mn doped GaAs valence band structure. Calculating numerically the energy structure of deformed GaMnAs magnetic semiconductor, we also found the total energy of electron system as a function of orientation of the average magnetization vector. Our calculations show how the direction of the magnetization easy axis can be effectively rotated by using different types of deformation.

DOI: 10.12693/APhysPolA.128.219
PACS numbers: 75.50.Pp, 75.30.Gw, 75.80.+q