Influence of Acoustic Phonons on the Magnetic Anisotropy in GaMnAs Magnetic Semiconductors
C. Jasiukiewicza, S. Stagraczyński b, D. Lehmann c, V.K. Dugaeva,d and J. Berakdar b
aDepartment of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
bInstitut für Physik, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch Str. 3, 06120 Halle (Saale), Germany
cInstitut für Theoretische Physik, Technische Universität Dresden, Zellescher Weg 17, 01062 Dresden, Germany
dDepartamento de Física and CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, av. Rovisco Pais, 1049-001 Lisbon, Portugal
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We present a theoretical description of the influence of incoherent acoustic phonons on the magnetic anisotropy of magnetic semiconductors. Our theory is based on the six-band Kane model of the electron energy spectrum describing the valence band with k· p Hamiltonian including the hole-phonon interaction term. We include the effect of incoherent phonons through the hole self-energy in the six-band model, and assume a strong laser-pulse-induced flux of non-equilibrium acoustic phonons. The results of numerical calculations of magnetic anisotropy performed for (GaMn)(AsP) magnetic alloy semiconductors demonstrate the essential role of incoherent phonons.

DOI: 10.12693/APhysPolA.128.179
PACS numbers: 75.50.Pp, 75.30.Gw, 77.80.Fm