Ac Conductivity Measurement of Cd5Se95-xZnx Chalcogenide Semiconductor Using Correlated Barrier Hopping Model
Mohsin Ganaie and M. Zulfequar
Department of Physics, Jamia Millia Islamia, New Delhi 110025, India
Received: August 9, 2014; In final form: May 14, 2015
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Cd5Se95-xZnx (x=0, 2, 4, 6) chalcogenide semiconductors were prepared by conventional melt-quenching and were characterized by X-ray diffraction, scanning electron microscopy, and Fourier transform infrared studies. Ac conductivity of Cd5Se95-xZnx chalcogenide semiconductor has been investigated in the frequency range of 1 kHz-1 MHz and in the temperature range of 290-370 K. The analysis of the experimental results indicates that the ac conductivity is temperature, frequency and concentration dependent. Ac conductivity is found to obey the power law ωs where s < 1. A strong dependence of ac conductivity and exponent s can be well interpreted in terms of correlated barrier hopping model. The maximum barrier height Wm were calculated from the results of dielectric loss according to the Guintini equation that agree with the theory of hopping of charge carriers over potential barrier as suggested by Elliot in case of chalcogenide semiconductors.

DOI: 10.12693/APhysPolA.128.59
PACS numbers: 72.80.Ng, 77.22.-d