Variation of Electrical Resistivity with High Pressure in Ge-Te-Sn Glasses: A Composition Dependent Study

K.N.N. Prasada,b, Chandasree Dasc, K. Rukmania and S. Asokanc aDepartment of Physics, Bangalore University, Bangalore 560056, India bDepartment of Physics, BNM Institute of Technology, Bangalore 560070, India cDepartment of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India

Received: October 4, 2014; In final form: February 11, 2015

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The variation of normalized electrical resistivity in the system of glasses Ge15Te85-xSnx with (1 ≤ x ≤ 5) has been studied as a function of high pressure for pressures up to 9.5 GPa. It is found that with the increase in pressure, the resistivity decreases initially and shows an abrupt fall at a particular pressure, indicating the phase transition from semiconductor to near metallic at these pressures, which lie in the range 1.5-2.5 GPa, and then continues being metallic up to 9.5 GPa. This transition pressure is seen to decrease with the increase in the percentage content of tin due to increasing metallicity of tin. The semiconductor to near metallic transition is exactly reversible and may have its origin in a reduction of the band gap due to high pressure.

DOI: 10.12693/APhysPolA.127.1666 PACS numbers: 72.80.Ng