Structure and Some Physical Properties of Chemically Deposited Nickel Sulfide Thin Films
A.H. Hammad, Z.S. ElMandouh, H.A. Elmeleegi
Electron Microscope and Thin Films Department, Physics Division, National Research Centre, Dokki, 12311, Cairo, Egypt
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Ni2S2-x thin films with x=0, 0.5, and 1 were prepared by chemical bath deposition technique. Amorphous structure was discovered by XRD for x=1, while α-Ni7S6 and NiS phases were discovered for x=0, and x=0.5 respectively. SEM graphs of the studied films have confirmed the XRD results. Optical band gap values increase from 0.845 to 0.912 eV, with increase of the composition x from 0 to 1. Activation energy values increase in the range from x=0 to x=0.5 and does not change for x=1.

DOI: 10.12693/APhysPolA.127.901
PACS numbers: 61.05.cp, 68.37.Hk, 68.55.jd, 68.55.J-, 78.20.Ci, 78.68.+m, 73.50.Lw, 73.90.+f