Electrical and Optical Characteristics of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb Heterostructure Photodiode
M. Ahmetoglua, B. Kucura, I.A. Andreevb, E.V. Kunitsynab, M.P. Mikhailovab, Y.P. Yakovlevb
aDepartment of Physics, Faculty of Sciences and Arts, Uludag University, 16059 Gorukle, Bursa, Turkey
bIoffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
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In the present paper, electrical and optical properties of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.

DOI: 10.12693/APhysPolA.127.1007
PACS numbers: 72.20.-i, 73.40.Kp, 72.40.+w