Fabrication and Characterization of Vanadium/Vanadium Pentoxide/Vanadium (V/V2O5/V) Tunnel Junction Diodes

M.F. Ziaa, M.R. Abdel-Rahmana, N.F. Al-Khallib, N.A. Debbarb aPrince Sultan Advanced Technologies Research Institute (PSATRI), College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia bElectrical Engineering Department, College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia

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A metal/insulator/metal (MIM) diode is a structure in which a thin oxide layer is sandwiched between two metal layers. Metal/insulator/metal (MIM) diodes coupled to antennas have been widely investigated as detectors for millimeter wave and infrared radiation for imaging and spectroscopic applications. In this work, we report on the fabrication and characterization of MIM tunnel junction diodes by using a new material combination, vanadium-vanadium pentoxide-vanadium (V/V2O5/V), with contact areas of 2× 2 μm2. The V/V2O5/V MIM was fabricated using electron-beam lithography, sputter deposition and conventional liftoff methods. The fabricated V/V2O5/V MIM diodes showed a maximum absolute sensitivity of 2.35 V-1. In addition, noise spectra for the fabricated MIM diodes were measured and analyzed.

DOI: 10.12693/APhysPolA.127.1289 PACS numbers: 85.30.Kk