Impurity-Related Linear and Nonlinear Optical Absorption Coefficients of Unstrained (In,Ga)N-GaN Symmetric Coupled QWs |
| H. El Ghazia,b and A. John Peter c
aLPS, Faculty of Science, Dhar EL Mehrez, BP 1796 Fes-Atlas, Morocco bSpecial Mathematics, CPGE Rabat, Morocco cDepartment of Physics, Govt. Arts and Science College, Melur-625106, Madurai, India |
| Received: April 29, 2014; In final form: December 6, 2014 |
| Full Text PDF |
| Linear, third-order nonlinear and total optical absorption coefficients associated with intra-conduction band in wurtzite unstrained (In,Ga)N-GaN coupled quantum wells are calculated. Based on the effective-mass and the one-band parabolic approximations, the well and the barrier-widths effects are investigated variationally under finite confinement potential barrier. The results indicate that the structure size have a great influence on the optical properties. The results reveal also that larger optical absorption coefficients are obtained compared to single quantum well and a significant red-shift is obtained as the structure size increases. It is found that the modulation of the absorption coefficients can be easily obtained by adjusting the barrier and/or the well widths. |
DOI: 10.12693/APhysPolA.127.787 PACS numbers: 78.67.De, 78.20.Ci, 42.65.-k |