Study of p-Layer Doping Density and Surface Band Bending on the Indium Tin Oxide/Hydrogenated Amorphous Silicon Heterojunction Solar Cells
D. Racheda and H. Madani Yssad b
aLaboratoire de Physique des Plasmas, Matériaux Conducteurs et leurs Applications, U.S.T.O.M.B. B.P.1505, El M'nouar, Oran, Algérie
bLaboratoire LTE Département de Génie Mécanique, E.N.S.E.T B.P.1523, Route d'Es Senia, 31000 Oran, Algérie
Received: October 16, 2013; In final form: June 20, 2014
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A solar cell (indium tin oxide (ITO)/p-doped amorphous silicon (p-a-Si:H)/intrinsic polymorphous silicon (i-pm-Si:H)/n-doped crystalline silicon (n-c-Si)) simulation, focused on p-layer doping density NA and surface band bending Esbb at the interface ITO/p-layer has been performed. Despite the deterioration of p-layer material quality with doping density, the reduced bulk recombination was found to compensate for the increased loss in the p-layer. An increase of p-layer doping density NA and contact barrier height φb0 (variation of the surface band bending Esbb) leads to an increase of the efficiency of heterojunction with intrinsic thin layer solar cells.

DOI: 10.12693/APhysPolA.127.767
PACS numbers: 73.61.Jc, 71.20.Mq, 88.40.hj, 88.40.jj