Magnetic Field Sensor Based on Magnetic Tunnel Junction with Voltage-Tunable Magnetic Anisotropy
W. Skowrońskia, P. Wiśniowski a, J. Wronaa,b, A. Żywczak c and T. Stobiecki a
aAGH University of Science and Technology, Department of Electronics, al. Mickiewicza 30, 30-059 Kraków, Poland
bSingulus Technologies, Kahl am Main, 63796, Germany
cAGH University of Science and Technology, Academic Center for Materials and Nanotechnology, al. Mickiewicza 30, 30-059 Kraków, Poland
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We present a submicron magnetic field sensor with voltage-tunable magnetic field sensitivity. The device, based on magnetic tunnel junction, exhibits high tunnelling magnetoresistance ratio of up to 90 %. Perpendicular magnetic anisotropy of thin ferromagnetic sensing layer in combination with an in-plane magnetized reference layer is used to obtain linear change in the sensor resistance in response to the in-plane magnetic field. The perpendicular anisotropy is further controlled by the bias voltage and, thus, the sensitivity of the sensor is changed. In addition, we evaluate the sensor selectivity for the magnetic field direction and present an influence of the temperature on the anisotropy.

DOI: 10.12693/APhysPolA.127.496
PACS numbers: 85.75.-d, 85.75.Ss, 85.35.-p