Charge and Spin Transport in a Metal-Semiconductor Heterostructure with Double Schottky Barriers

S. Wolskia, C. Jasiukiewicz a, V.K. Dugaeva,b, J. Barnaś c, T. Slobodskyy d, and W. Hansen d aDepartment of Physics, Rzeszów University of Technology, Al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland bDepartamento de Física and CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisbon, Portugal cFaculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland cInstitute for Applied Physics, University of Hamburg dJungiusstraß e 11, 20355 Hamburg, Germany

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Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor.

DOI: 10.12693/APhysPolA.127.472 PACS numbers: 73.30.+y, 73.40.-c, 75.76.+j