The Effect of Hydrogenation on the Electrical Resistivity of Amorphous Alloys
M. Ornat and A. Paja
AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Department of Solid State Physics, al. A. Mickiewicza 30, 30-059 Krakow, Poland
Received: May 6, 2014
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Theoretical investigations of the influence of hydrogen contents on the electrical resistivity of amorphous metallic alloys have been carried out. We have made use of our method of calculations of the electrical resistivity of disordered systems based on the ground of Morgan-Howson-Saub and Evans models. Our method is fully quantum, includes multiple scattering effects and uses the scattering matrix operators for describing the electron-ion interactions. The model gives good agreement with experiment for many binary systems and should work for ternary systems as well, thus we performed calculations with hydrogen as one of the components of a ternary alloy. The results of our calculations show that the resistivity should increase with hydrogen concentration. Some experimental data confirm this predication.

DOI: 10.12693/APhysPolA.126.1296
PACS numbers: 72.15.Cz, 72.15.Qm, 72.15.Rn