ACTA

Optical and Electrical Studies of Graphene Deposited on GaN Nanowires

J. Kierdaszuk^a, P. Kaźmierczak^a, A. Drabińska^a, A. Wysmołek^a, K. Korona^a, M. Kamińska^a, K. Pakuła^a, I. Pasternak^b, A. Krajewska^b,c and Z.R. Żytkiewicz^d
^aFaculty of Physics, University of Warsaw, Warszawa, Poland
^bInstitute of Electronic Materials Technology, Warszawa, Poland
^cInstitute of Optoelectronics, Military University of Technology, Warszawa, Poland
^dInstitute of Physics, Polish Academy of Sciences, Warszawa, Poland

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In this paper using scanning electron microscope, contactless microwave electronic transport and the Raman spectroscopy we studied the properties of graphene deposited on GaN nanowires and compared it with the graphene deposited on GaN epilayer. The Raman micro-mapping showed that nanowires locally change the strain and the concentration of carriers in graphene. Additionally we observed that nanowires increase the intensity of the Raman spectra by more than one order of magnitude.

DOI: 10.12693/APhysPolA.126.1087
PACS numbers: 81.05.ue, 72.10.Fk, 78.67.Wj, 72.80.Vp