ACTA

Swift Xe²⁶⁺ Ion Irradiation Effect on Luminescent Properties of Undoped and Cd-Doped ZnO Films

D.V. Myroniuk^a, G.V. Lashkarev^a, I.I. Shtepliuk^a, V.A. Skuratov^b, A. Reszka^c and B.J. Kowalski^c
^aFrantsevich Institute for Problems of Material Science, NAS of Ukraine, 3 Krzhizhanovsky str., 03680 Kyiv, Ukraine
^bJoint Institute for Nuclear Research, Joliot-Curie 6, 141980, Dubna, Moscow region, Russia
^cInstitute of Physics, PAS, al. Lotników 32/46, 02-668 Warszawa, Poland

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Here we report the effect of the irradiation by 167 MeV Xe²⁶⁺ ions (in the fluence range up to 3 × 10¹² ions/cm²) on the undoped and Cd-doped (0.4, 0.5 at.%) ZnO films deposited by radiofrequency magnetron sputtering. As-grown and irradiated samples were investigated by cathodoluminescence spectroscopy. It was found that the radiation causes a decrease in intensity of luminescent peaks and a redistribution of the radiative recombination channels. We revealed that the cadmium incorporation into ZnO lattice enhances the radiation resistance of ZnO film.

DOI: 10.12693/APhysPolA.126.1199
PACS numbers: 78.55.Et, 78.60.Hk