ACTA

Structural and Electronic Properties of Graphene Oxide and Reduced Graphene Oxide Papers Prepared by High Pressure and High Temperature Treatment

M. Tokarczyk^a, G. Kowalski^a, A.M. Witowski^a, R. Koziński^b, K. Librant^b, M. Aksienionek^b, L Lipińska^b and P. Ciepielewski^b
^aInstitute of Experimental Physics, Faculty of Physics, University of Warsaw, L. Pasteura 5, 02-093 Warszawa, Poland
^bInstitute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

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"Graphene paper" prepared by new proprietary method involving high pressure and high temperature treatment in the reduction process show new possibilities in this area. Different phase content: multilayer and single layer graphene stacks recorded in this study for RGO samples are accompanied by the specific electric and optical parameters. We have found that process temperatures above 900°C play crucial role in structural and other properties. For the process temperature around 2000°C we found the onset of the graphitization in the samples.

DOI: 10.12693/APhysPolA.126.1190
PACS numbers: 61.48.Gh, 61.72.Dd, 63.22.Rc