ACTA

Anomalous Hall Effect in Ge_1-x-yPb_xMn_yTe Composite System

A. Podgórni^a, L. Kilanski^a, W. Dobrowolski^a, M. Górska^a, V. Domukhovski^a, B. Brodowska^a, A. Reszka^a, B.J. Kowalski^a, V.E. Slynko^b and E.I. Slynko^b
^aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
^bInstitute of Materials Science Problems, Ukrainian Academy of Sciences, 5 Wilde Str., 274001 Chernovtsy, Ukraine

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The purpose of this study was to investigate the magnetotransport properties of the Ge_0.743Pb_0.183Mn_0.074Te mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor with critical temperature T_SG=97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a function of temperature has a minimum at 30 K. Below the minimum a variable-range hopping is observed, while above the minimum a metallic-like behavior occurs. The crystal has high hole concentration, p=6.6×10²⁰ cm^-3, temperature-independent. Magnetoresistance amplitude changes from -0.78 to 1.18% with increase of temperature. In the magnetotransport measurements we observed the anomalous Hall effect with hysteresis loops. Calculated anomalous Hall effect coefficient, R_S = 2.0 ×10⁶ m³/C, is temperature independent. The analysis indicates the extrinsic skew scattering mechanism to be the main physical mechanism responsible for anomalous Hall effect in Ge_0.743Pb_0.183Mn_0.074Te alloy.

DOI: 10.12693/APhysPolA.126.1180
PACS numbers: 61.72.J-, 72.80.Ga, 75.40.Mg, 75.50.Pp