ACTA

Fabrication and Properties of the Photosensitive Anisotype n-Cd_xZn_1-xO/p-CdTe Heterojunctions

V.V. Khomyak^a, V.V. Brus^a, M.I. Ilashchuk^a, I.G. Orletsky^a, I.I. Shtepliuk^b and G.V. Lashkarev^b
^aFedkovich Cherinvtsi National University, 2 Kotsubinsky str., 58012 Chernivtsi, Ukraine
^bFrantsevich Institute for Problems of Materials Science, NAS Ukraine, Krzhizhanivsky str., 03680 Kyiv, Ukraine

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We have fabricated photosensitive anisotype n-Cd_xZn_1-xO/p-CdTe heterojunctions by a deposition of Cd_0.5Zn_0.5O film onto freshly-cleaved CdTe monocrystalline wafers using a radiofrequency magnetron reactive sputtering of a zinc-cadmium alloy target. Fundamental electrical properties of the heterojunctions were studied. Dominant mechanisms of a current transport were found. n-Cd_xZn_1-xO/p-CdTe heterojunctions were photosensitive and were able to operate both in photovoltaic and photodiode modes.

DOI: 10.12693/APhysPolA.126.1163
PACS numbers: 72.40.+w, 73.40.Lq, 81.15.Lm