AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)
P. Mazur, S. Zuber, M. Grodzicki and A. Ciszewski
Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, 50-204 Wrocław, Poland
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Atomic force microscopy and scanning tunneling microscopy have been used for nanometer scale modifications of Sb films deposited on 6H-SiC(0001) surface. The films are grown in situ by vapor deposition under ultrahigh vacuum. The growth follows the Volmer-Weber mode. Ultrathin (up to 3 nm on average) Sb films which consist of no coalesced islands can be modified by moving the island over the substrate surface by the AFM tip. Thicker films, which are firmer due to the coalescence, can be modified by the field and/or current produced by STM tip. Final result of the modifications is adsorbate free 6H-SiC(0001) surface restitution over the modified area.

DOI: 10.12693/APhysPolA.126.1131
PACS numbers: 81.05.Dz, 68.37.Ps, 68.37.Ef, 68.37.-d, 81.10.Bk, 81.07.-b