ACTA

Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers

K. Levchenko^a, T. Andrearczyk^a, J.Z. Domagala^a, T. Wosinski^a, T. Figielski^a and J. Sadowski^a,b
^aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
^bMAX-IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden

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High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Bi into the layers is interpreted as a result of increased spin-orbit coupling in the (Ga,Mn)(Bi,As) layers.

DOI: 10.12693/APhysPolA.126.1121
PACS numbers: 75.50.Pp, 75.30.Gw, 73.50.Jt, 85.75.-d