Properties of Sonochemically Prepared CuInxGa1-xS2 and CuInxGa1-xSe2
M. Jesioneka, M. Nowaka, P. Szperlicha, M. Kępińskaa, K. Mistewicza, B. Torońa, D. Stróżb, J. Szalac and T. Rzychońc
aSolid State Physics Section, Institute of Physics - Center for Science and Education, Silesian University of Technology, Z. Krasińskiego 8, 40-019 Katowice, Poland
bInstitute of Materials Science, University of Silesia, 75 Pułku Piechoty 1A, 41-500 Chorzów, Poland
cDepartment of Materials Science, Silesian University of Technology, Z. Krasińskiego 8, 40-019 Katowice, Poland
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Nanoparticles of chalcopyrites copper indium gallium sulfide (CuInxGa1-xS2 or CIGS) and copper indium gallium selenide (CuInxGa1-xSe2 or CIGSe) were fabricated sonochemically. They were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, high resolution transmission electron microscopy, selected area electron diffraction, and diffuse reflectance spectroscopy. The electrical and photoelectrical properties of the fabricated nanomaterials were investigated.

DOI: 10.12693/APhysPolA.126.1107
PACS numbers: 43.35.Ei, 72.20.Jv, 72.40.+w, 81.07.Bc