Growth and Characterization of YBa2Cu3O7-δ Films Deposited by Laser Ablation on CeO2-Buffered Sapphire
I. Abal'oshevaa, I. Zaytseva a, M. Aleszkiewicz a, A. Malinowski a, V. Bezusyy a, Y. Syryanyy a, P. Gierłowski a, O. Abal'oshev a, M. Kończykowski b and M.Z. Cieplak a
aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland
bLaboratoire des Solides Irradies CEA/DSM/IRAMIS & CNRS UMR7642, Ecole Polytechnique, 91128 Palaiseau, France
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In this work we study the growth, by pulsed laser deposition, of YBa2Cu3O7-δ (YBCO) films on the CeO2-buffered R-cut sapphire substrates, with the buffer layer recrystallized prior to the deposition of superconductor. We find that the superconducting critical temperature and the critical current density of the films are very close to similar parameters for the YBCO films grown on lattice-matched single crystalline substrates. It appears that the structural defects in the buffer layer affect the microstructure of YBCO films, resulting in high values of the critical current density, suitable for applications.

DOI: 10.12693/APhysPolA.126.A-69
PACS numbers: 74.78.-w, 77.55.Px, 81.15.Fg