Characteristics of Ba-Doped PbS Thin Films Prepared by the SILAR Method |
| Y. Gülen
Department of Physics, Faculty of Arts and Sciences, Marmara University, Istanbul, Turkey |
| Received: December 20, 2013; Revised version: March 10, 2014; In final form: March 28, 2014 |
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| In this material production research, undoped and Ba-doped nanostructured PbS films are fabricated on glass surfaces by SILAR method. The structural, optical and morphological properties of the films are examined via scanning electron microscopy, UV-vis spectrophotometry and X-ray diffraction analysis. Scanning electron microscopy analysis revealed that Ba-doping concentration influences the size of the thin film's nanoparticles. X-ray diffraction results showed that all of the thin films are in a face centered cubic structure. Optical studies, in the room temperature, revealed that the optical band gap of the films increases as Ba-doping concentration is increased. The intercept values on the energy axis in the range of 1.86 eV and 2.12 eV for 1% and 8% Ba-doped PbS films respectively. As a result, it is concluded that the structural, optical and morphological properties of the fabricated thin films are directly depend on the Ba doping ratio. |
DOI: 10.12693/APhysPolA.126.763 PACS numbers: 61.05.-a, 61.05.cp, 68.55.Ln |