Compositional Dependence of Optical Modes Frequencies in TlGaxIn1-xS2 Layered Mixed Crystals (0 ≤ x ≤ 1)
M. Isika, N.M. Gasanly b and F. Korkmaz a
aDepartment of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey
bDepartment of Physics, Middle East Technical University, 06800 Ankara, Turkey
Received: January 29, 2014; In final form: April 2, 2014
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The infrared transmittance and Raman scattering spectra in TlGaxIn1-xS2 (0 ≤ x ≤ 1) layered mixed crystals grown by the Bridgman method were studied in the frequency ranges of 400-2000 and 250-400 cm-1, respectively. The bands observed at room temperature in IR transmittance spectra of TlGaxIn1-xS2 were interpreted in terms of multiphonon absorption processes. The dependences of the frequencies of IR- and Raman-active modes on the composition of TlGaxIn1-xS2 mixed crystals were also established. The structural characterization of the mixed crystals was investigated by means of X-ray diffraction measurements and compositional dependence of lattice parameters was revealed.

DOI: 10.12693/APhysPolA.126.747
PACS numbers: 61.82.Fk, 77.84.Bw, 78.20.-e, 78.30.-j