Phason Contribution to the Dislocation Loop Bias in Quasicrystals
G.N. Lavrova, A.A. Turkin and A.S. Bakai
NSC Kharkov Institute of Physics and Technology, Kharkov 61108, Ukraine
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We develop a model of the absorption of vacancies and self-interstitial atoms by dislocation loops and associated phason defects in quasicrystals under irradiation. The capture efficiency and the bias of the loop for radiation point defects are evaluated for variable loop sizes. Numerical calculation of these quantities is performed for comparison. It is shown that phason defects decrease the total bias of the dislocation loop in a quasicrystal.

DOI: 10.12693/APhysPolA.126.505
PACS numbers: 61.44.Br, 61.72.Lk, 61.80.Az