LSMO Films with Increased Temperature of MI Transition |
| M. Španková, Š. Chromik, E. Dobročka, V. Štrbík, M. Sojková
Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava, Slovakia |
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| Epitaxial La0.67Sr0.33MnO3 thin films with a significant increased temperature of metal-insulator transition (~450 K) are prepared on single crystal MgO (001) substrates using different deposition techniques - a dc magnetron sputtering or a pulsed laser deposition. The crystalline perfection of the films is characterized by X-ray diffraction technique (rocking curve measurements and reciprocal space maps). As a consequence of different methods of the film preparation we show various types of the LSMO crystal structure. Our results indicate that all the LSMO layers grown on the MgO substrate with a lattice misfit of about 8% are relaxed. |
DOI: 10.12693/APhysPolA.126.212 PACS numbers: 61.05.cp, 75.47.Lx, 81.15.Cd, 81.15.Fg |