Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions
F. Komarova, L. Vlasukovaa, O. Milchanina, M. Grebena, I. Parkhomenkoa, A. Mudryib, E. Wendlerc and P. Zukowskid
aBelarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus
bScientific and Practical Materials Research Center, National Academy of Sciences of Belarus, P. Brovki Str. 17, 220072 Minsk, Belarus
cInstitut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
dLublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland
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Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500°C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100°C unlike the other one.

DOI: 10.12693/APhysPolA.125.1288
PACS numbers: 61.80.-x, 61.72.Ff, 63.20.-e, 78.66.-w