Admittance and Permittivity in Doped Layered TlGaSe2 Single Crystals
S.A. Dawooda, A.K. Fedotova, T.G. Mammadovb, P. Zukowskic, T.N. Koltunowiczc, A.M. Saadd and N.A. Drozdova
aBelarusian State University, Independence av. 4, 220030 Minsk, Belarus
bInstitute of Physics of Azerbaijan National Academy of Science, Baku, Azerbaijan
cDepartment of Electrical Devices and High Voltages Technologies, Lublin University of Technology, Nadbystrzycka 38a, 20-618 Lublin, Poland
dAl-Balqa Applied University, P.O. Box 4545, Amman 11953, Jordan
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In doped TlGaSe2 crystals the phase transitions at low temperatures (100-170 K) were observed using admittance and dielectric spectroscopy in a temperature range of 80-320 K. The admittance and permittivity measurements in the studied samples indicated that after Fe or Tb doping by impurities with concentrations Nimp < 0.5 at.% nonequilibrium electronic phase transition is observed. Doping with Nimp > 0.5 at.% resulted in full suppression of this phase transition presence.

DOI: 10.12693/APhysPolA.125.1267
PACS numbers: 73.61.Ey, 84.37.+q, 64.70.Nd