Thermal Desorption Studies of Ar+ Implanted Silicon

A. Drozdziela, A. Wojtowicza, M. Tureka, K. Pyszniaka, D. Maczkab, B. Slowinskib, Y.V. Yushkevichc and J. Zuka aInstitute of Physics, Maria Curie-Skłodowska University, Lublin, Poland bNational Centre for Nuclear Studies, Świerk-Otwock, Poland cLaboratory of Nuclear Problems, JINR Dubna, Russia

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Thermal desorption spectrometry measurements were performed for Ar implanted Si samples. Implantation energy Ei varied in the range 85-175 keV. The release of implanted Ar in two steps was observed in the temperature range 930-1300 K: the relatively narrow peak at lower temperature ( ≈ 930 K for implantation fluence 5 × 1016 cm-2) is due to the release of Ar from the agglomerations (bubbles) while the broader peak observed for higher temperatures ( ≈ 950 K for implantation fluence 5 × 1016 cm-2) comes from Ar atoms diffusing out of the sample. Inverse order of peaks is observed compared to the results for lower energy implantations (< 50 keV). Analyzing the thermal desorption spectra collected for different heating ramp rates enabled estimation of the desorption activation energy (2 eV for Ei = 85 keV and 1.7 eV for Ei = 115 keV).

DOI: 10.12693/APhysPolA.125.1400 PACS numbers: 68.43.Vx, 61.72.uf